Background Information: 

Su-Huai Wei received his B.S. in Physics from Fudan University in China in 1981 and Ph.D. from the College of William and Mary in USA in 1985. He joined the Solar Energy Research Institute (it is now National Renewable Energy Laboratory or NREL) in 1985 as a postdoctoral researcher and later became Staff Scientist, Senior Scientist, Principal Scientist, Manager of the Theoretical Materials Science Group, and was an Institute Research Fellow at NREL before he joined the Beijing Computational Science Research Center (CSRC) in 2015. He joined the Eastern Institute of Technology, Ningbo, China in June, 2024 as Dean of School of Physics. His research is focused on developing first-principles electronic structure theory and calculation methods for studying underlying physics of materials properties of semiconductors, optoelectronic materials and energy related materials. He is a Fellow of both the American Physical Society and The Materials Research Society. He has published more than 580 SCI papers in leading scientific journals by the end of May, 2024, including more than 70 papers in the prestigious Physical Review Letters with more than 76000 citations (H index ＞ 136 per Google Scholar). 

Research Field:

1. Optoelectronic properties of photovoltaic and light-emitting materials

2. Defect physics in semiconductors

3. Electronic structures and stabilities of alloys, superlattices, and interfaces

4. Novel properties in nano materials

5. Magnetic properties of semiconductors

6. Electronic properties of organic and hybrid semiconductors

7. Energy storage materials.

8. Electronic structure calculation methods.

Educational Background:

6/83 - 8/85, Ph.D. in Physics, College of William and Mary, USA

8/81 - 5/83, M.S. in Physics, College of William and Mary, USA

2/78 - 6/81, B.S. in Physics, Fudan University, Shanghai, China

Work Experience:

2024-present, Chair Professor and Dean, School of Physics, Eastern Institute of Technology, Ningbo

2015-2024, Chair Professor and Head, Materials and Energy Division, Beijing Computational Science Research Center (CSRC), China

2014-2015, Institute Research Fellow, National Renewable Energy Laboratory (NREL), USA

2003-2015, Principal Scientist and Group Manager, Theoretical Materials Science (NREL)

1995-2003, Senior Scientist II/Team Leaders, Computational Materials Science (NREL)

1992-1995, Senior Scientist I (NREL)

1990-1992, Staff Scientist,  (NREL, formerly SERI)

1985-1989, Postdoctor/Research Associate, Solar Energy Research Institute (SERI)

Awards and Honors:

1999: Fellow of the American Physical Society 

2007: Changjiang Chair Professor, Fudan University

2014: NREL Institute Research Fellow

2014: Fellow of the Materials Research Society

2015: National Professor of China

Representative Works:

General Information

Published more than 580 SCI papers, including more than 70 papers in the prestigious Physical Review Letters and 60 in the Applied Physics Letters. Have also published many papers in Physical Review X, Journal of the American Chemical Society, Science Advances, Nature Computational Sciences and Nature Communications, with more than 76000 citations (H index > 136 per Google Scholar by May 31, 2024). 

Google Scholar：

https://scholar.google.com/citations?user=WLN0rVoAAAAJ 

Web of Knowledge：

https://www.webofscience.com/wos/author/record/1896768 

1. S.-H. Wei and H. Krakauer, “Local-density-functional calculation of the pressure-induced metallization of BaSe and BaTe”, Phys. Rev. Lett. 55, 1200 (1985). 

2. S.-H. Wei and A. Zunger, “Role of metal d states in II-VI semiconductors”, Phys. Rev. B 37, 8958 (1988). 

3. H.-X. Deng, J.-W. Luo*, S.-S. Li, and S.-H. Wei*, “Origin of the distinct diffusion behaviors of Cu and Ag in covalent and ionic semiconductors”, Phys. Rev. Lett. 117, 165901 (2016). 

4. A. Walsh, J.L.F. Da Silva, and S.-H. Wei, “Theoretical description of carrier mediated magnetism in cobalt doped ZnO”, Phys. Rev. Lett. 100, 256401 (2008). 

5. S.-H. Wei, L. G. Ferreira, J. E. Bernard, and A. Zunger, “Electronic properties of random alloys: special quasirandom structures”, Phys. Rev. B 42, 9622 (1990). 

6. S.-H. Wei and A. Zunger, “Giant and composition-dependent optical bowing coefficient in GaAsN alloys”, Phys. Rev. Lett. 76, 664 (1996). 

7. J. Yang and S.-H. Wei*, “First-principles study of the band gap tuning and doping control in CdSexTe1-x alloy for high efficiency solar cell”, Chin. Phys. B 28, 086106 (2019). 

8. C. H. Park, S. B. Zhang and S.-H. Wei, “Origin of p-type doping difficulty in ZnO: The impurity perspective,” Phys. Rev. B 66, 073202 (2002). 

9. S. B. Zhang and S.-H. Wei, “Nitrogen solubility and induced defect complexes in epitaxial GaAs:N,” Phys. Rev. Lett. 86, 1789 (2001). 

10. Y. Gai, J. Li*, S.-S. Li, J.-B. Xia and S.-H. Wei*, “Design of narrow-gap TiO2: A passivated codoping approach for enhanced photoelectrochemical activity,” Phys. Rev. Lett. 102, 036402 (2009).